Power FET Contact Technology.

Abstract

Unalloyed TiPtAu ohmic contacts were formed on n-type GaAs by preparing surfaces having over 10 to the 19th power carriers/cc prior to metal deposition. Two methods were used, vapor phase epilayer growth and pulse electron beam annealed (PEBA) selenium implants. The former method yielded specific contact resistivities .000008 < or = r(c) < or = .00009 ohm sq. cm and was successfully applied on power FET devices. Much lower resistivities, r(c) approx. 3 to the -7th power ohm sq. cm, were obtained by PEBA implants but difficulties associated with preserving channel layers through the PEBA exposure have precluded their application in a device configuration. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA092320

Entities

People

  • R. Mozzi
  • Y. Tajima

Organizations

  • RTX

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Electrical Measurement
  • Electron Beams
  • Electron Energy
  • Energy
  • Fabrication
  • Field Effect Transistors
  • Films
  • Heat Treatment
  • Lasers
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Microscopes
  • Military Research
  • Schottky Diodes
  • Semiconductors

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene