New Passivation Methods of GaAs.

Abstract

With the information provided by previous ESCA studies that there is non-oxidized. As in the oxide near the interface, detailed efforts have been undertaken to produce MOS structures without this deficiency. A two step insulator fabrication scheme was used to obtain improved capacitance-voltage characteristics. Other efforts concerned the deposition fo different insulators on GaAs. The passivation of quarternary compound semiconductors was undertaken. Results on the experimental investigation regarding the mechanism of light emission from thin MOS structures are reported. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA092354

Entities

People

  • D. Pavlidis
  • E. Huber
  • H. Adachi
  • H. L. Hartnagel
  • S. Hannah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Electrical Properties
  • Electronics Laboratories
  • Field Effect Transistors
  • Hydroxides
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Measurement
  • Modules (Electronics)
  • Power Electronics
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene