The Study and Identification of Residual Donor Species in High Purity Semiconductors.

Abstract

A far infrared Fourier transform spectroscope has been constructed which uses photothermal ionization to probe the energy level structure of shallow impurities, enabling identification and measurement of relative concentrations of residual impurity species in high purity semiconductors. Spectra from samples grown by MO-CVD, MBE, LPE, and both hydride and chloride VPE are shown and analyzed. Some mathematical details about the Fourier transform are considered and a computer investigation of spectral line shape distortion by the transform is described.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1980
Accession Number
ADA092542

Entities

People

  • G. E. Stillman
  • T. S. Low

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Computers
  • Detection
  • Distortion
  • Electrical Engineering
  • Electrons
  • Energy Levels
  • Engineering
  • Identification
  • Materials
  • Measurement
  • Military Research
  • Plastic Explosives
  • Semiconductors
  • Spectra
  • Spectral Lines
  • Spectroscopy

Readers

  • Analytical Chemistry
  • Calculus or Mathematical Analysis
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics