Dynamic Properties of Interface States in MOS-Structures.
Abstract
With the CC-DLTS (= constant capacitance deep level transient spectroscopy) method the energy distribution of the interface state density and the capture cross sections of MOS structures can be determined. A new evaluation procedure for this method was developed. The procedure used hitherto was based on rather restrictive assumptions and therefore provided results of lesser reliability. The new procedure requires more experimental data than the previous one, because one had overlooked that the basic equations possess more than one solution. The limits of the new procedure are outlined. A full evaluation for the energy distribution of both the interface state density and the capture cross sections is in the reach of today's instrumental means if N sub ss is somewhat greater than 10 to the 10th power/V/sq. cm. The previous method has a semi-quantitative character. Though it yields interface state densities down to 10 to the 9th power/V/sq. cm., it does not permit evaluation of capture cross sections and energy distribution. An experimental comparison of the CC-DLTS and conductance methods is presented. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1980
- Accession Number
- ADA092626
Entities
People
- A. Goetzberger
- E. Klausmann