Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.
Abstract
The electrodeposition of silicon carbide from various molten salt systems is described. The most promising system of those studied to date is the binary Li2CO3/SiO2 system with electrolysis proceeding using SiC electrodes at 1000-1050C. Considerable progress has been made towards optimizing the conditions used for electrodeposition. Zirconium or vitreous carbon crucibles are most favorable from the standpoint of the stability of the lithium carbonate against decomposition. An SiO2 concentration of 0.20 + or - 0.05 appears most favorable, with deposition proceeding at a constant potential in the region of 0.5V. Studies aimed at closer specification of optimum conditions are continuing. Electrodeposited SiC is normally polycrystalline, but there is evidence that epitaxial deposition on a single crystal alpha-SiC substrate has been achieved. This observation, if confirmed by more detailed study, would mean that the second major goal of this program has been achieved. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1980
- Accession Number
- ADA092888
Entities
People
- D. Elwell
- Robert S. Feigelson
- Theodore H. Geballe
Organizations
- Stanford University