Research on InGaAs FETs.

Abstract

The fabrication of Schottky-gate field-effect transistors on InGaAs lattice matched to InP is reported. A higher bandgap interface layer is used to lower the gate leakage to acceptable levels. A technique to deduce the effective saturated electron drift velocity is given which shows over a factor of two higher saturated velocity for InGaAs in comparison to GaAs. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA092941

Entities

People

  • C. Hooper
  • C. Nishimoto
  • S. Bandy
  • Salman M. Hyder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Power Electronics
  • Semiconductors
  • Test And Evaluation
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics