Defects and Disorder Produced by Ion Implantation in Solids.

Abstract

Silicon and Gallium Arsenide samples doped by ionic implantation have been characterized by Raman spectroscopy. A specific behaviour under laser annealing has been shown. This behaviour can be explained by the presence of microcrystallites in the annealed region. A model describing vibrational properties of the microcrystallites has been established and compared with experimental results. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA092987

Entities

People

  • G. Kanellis
  • J. F. Morpange
  • M. Balkanski

Organizations

  • Pierre and Marie Curie University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Boundaries
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystals
  • Elements
  • Frequency
  • Frequency Shift
  • Gallium Arsenides
  • Geometry
  • Laser Beams
  • Light Scattering
  • Raman Spectra
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Theoretical Analysis.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene