High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit.
Abstract
The objectives of this program are: (1) study of high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit development; and (2) annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. We have: (1) investigated implantation of Si(28+) into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV; (2) developed a capless thermal annealing process under arsenic overpressure which results in high activation efficiency with excellent surface morphology; (3) investigated laser-annealing of Si-implanted GaAs using a high-power Nd:Glass laser and a ruby laser. Electrical activation of high-dose, low-energy (<300 keV) implanted samples is many times higher in laser-annealed samples than for those thermally annealed; (4) demonstrated nonalloyed ohmic contacts formed by direct evaporation of AuGe onto high-dose implanted laser-irradiated GaAs surface; and (5) studied impurity distribution in as-implanted, thermally annealed, and laser-annealed samples by secondary ion mass spectrometry. The amount of impurity redistribution depends on the energy and the dose of implantation and on the energy density of the annealing laser pulse. Investigations were continued in (1) si-implantation and capless annealing; (2) laser and electron beam annealing; and (3) chromium redistribution in implanted and annealed GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1980
- Accession Number
- ADA093103
Entities
People
- C. P. Wu
- C. W. Magee
- S. G. Liu
Organizations
- Sarnoff Corporation