Nuclear Transmutation Doping of GaAs

Abstract

Superior GaAs material is in great demand for high frequency and high speed GaAs devices such as Impatt diodes, Gunn diodes, field effect transistors, and avalanche photodiodes. The quality and control of impurities in GaAs material is much less advanced than in elemental semiconductors such as Si. This is partly because substitutional dopants can occupy either Ga sites or As sites and they tend to associate and cluster. We intend to develop a new method for preparing homogeneous and well controlled GaAs material. This method is nuclear transmutation doping. It has yielded superior Si and Ge semiconductor device material and should be even more successful in the case of GaAs because of the larger neutron capture cross sections and shorter radioactive decay times involved. We intend to study the doping characteristics of bulk and epitaxial layers of GaAs using nuclear transmutation doping and the resulting electrical characteristics.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1980
Accession Number
ADA093217

Entities

People

  • H. Fritzsche

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Diodes
  • Efficiency
  • Electron Mobility
  • Electrons
  • Encapsulation
  • Energy Bands
  • Field Effect Transistors
  • Gunn Diodes
  • Materials
  • Neutron Capture
  • Nuclear Transmutation
  • Photodiodes
  • Semiconductor Devices
  • Semiconductors
  • Thermal Neutrons
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics