The Interaction of Silicon with a Pd (100) Surface.

Abstract

The interaction of silicon with a clean Pd(100) surface was studied in UHV using LEED, AES and UV-photoemission. Deposition around 75 C leads to disordered Si layers with little evidence of bluk diffusion or compound formation. Slight warming to about 150 C causes the immediate development of a complex LEED pattern indicative of long-range ordering. A pronouced splitting of the Si LVV Auger line as well as the appearance of a photoemission level about 2.5 eV below Ef is attributed to the formation of palladium (II) silicide, Pd2Si. Annealing at 250-500 C leads to decomposition of this silicdie as indicated by the destruction of the complex LEED pattern and the disappearance of the Pd2Si Auger lines. Above 600 C diffusion of silicon into the bulk predominates which leads to a rapid depletion of silicon on the Pd surface as can be followed from both AES and UPS.

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Document Details

Document Type
Technical Report
Publication Date
Dec 09, 1980
Accession Number
ADA093290

Entities

People

  • J.e. Demuth
  • K. Christmann

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Diffusion
  • Electron Spectroscopy
  • Electrons
  • Engineering
  • Materials
  • Metals
  • Military Research
  • New York
  • Palladium
  • Photoelectric Emission
  • Spectra
  • Transition Metals
  • United States

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.