Chemical Reactions at the Metal/Silicon Interface.

Abstract

This report includes the studies of Si(111) and Si(100) surfaces with Pd, Pt, Ni, and V metal overlayers leading to silicide formation. Experimental techniques utilized include ultraviolet photoemission spectroscopy, Auger electron spectroscopy, work function measurements and transmission electron microscopy.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1980
Accession Number
ADA093316

Entities

People

  • G. W. Rubloff
  • P. S. Ho
  • T. Y. Tan

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Band Structures
  • Band Theory Of Solids
  • Chemical Reactions
  • Crystal Structure
  • Electron Microscopy
  • Electron Spectroscopy
  • Energy Bands
  • Fermi Levels
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Transition Metals

Fields of Study

  • Materials science
  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene