Electromigration Testing of Al-Alloy Films.
Abstract
A search for reliability improvement of Al film interconnections has led to the introduction of Al-Alloy films such as Al+Cu, Al+Cu+Si and so on. This report describes the results of an in-depth study of Al, Al+Cu (2 wt % Cu) and Al+Cu+Si (2 wt % Cu + 1% Si) film interconnections and Silicon/Al-Alloy film contacts as they impact reliability of integrated circuits. Resistivity, microstructure and composition of Al-Alloy films vacuum deposited from an induction heated source (IN-Source) and dc magnetron sputter deposition techniques have been investigated and it is concluded that IN-Source and dc magnetron sputter deposition tecniques are equally capable of producing Al, Al+Cu (2 wt %) and Al+Cu+Si (2 wt % Cu + 1% Si) films of comparable compositions, resistivity and microstructure. Chemical Analysis X-Ray Fluorescence Electron Microprobe, Scanning and Transmission Electron Microscopy and Ion Microprobe have been employed for Al-Alloy film characterization. Availability of automated dc magnetron sputter (M-S) deposition equipment was a primary factor in the selection of magnetron sputter deposited Al-Alloy films for electromigration testing. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1980
- Accession Number
- ADA093492
Entities
People
- P. B. Ghate
Organizations
- Texas Instruments