Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

This report covers the high current injection into SiO2 using Si rich SiO2, the use of Raman scattering to observe amorphous Si in Si rich SiO2 and the crystallization of this amorphous Si at high temperatures, the use of attenuated total reflectance measurements to study Si rich SiO2, measurements of physical characteristics of oxides grown using high pressure oxidation, and the description of an automatic tester developed for use in electron and hole trapping studies.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1980
Accession Number
ADA093506

Entities

People

  • A. Hartstein
  • D. J. Dimaria
  • D. W. Dong
  • J. A. Calise
  • R. Ghez

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Charge Carriers
  • Diffraction
  • Electromagnetic Fields
  • Electronics Industry
  • Energy Bands
  • Field Effect Transistors
  • Geometry
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Oxide Films
  • Refractive Index
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene