Preparation and Properties of Al(x)Ga(1-4)As:Cr Single Crystals.
Abstract
This research program is divided into the following four related topics: (1) Growth of Al(x)Ga(1-4)As:Cr thin semi-insulating (SI) layers by liquid phase epitaxial (LPE) techniques, (2) Properties of Cr deep levels in Al(x)Ga(1-4)As:Cr single crystals (3) Investigation of the interface properties of (SI)AlxGal-xAs:Cr-(n)GaAs heterojunctions and (4) Construction and properties of Au-(SI)Al(x)Ga(1-4)As:Cr-(n)GaAs-(SI)GaAs:Cr MIS field effect transistor structures. Methods have been developed for reproducibly growing high quality Cr doped single crystal layers having selected values of x between 0.0 and 0.9 with specified thicknesses between 300 A and several micrometers. The results were analyzed to determine the current-transport mechanisms as well as to obtain information on the localized states and electron potential at the (SI)AlGaAs-GaAs interface. Two different insulated gate field-effect transistor structures were designed which consist of (1) a self aligned p-channel device formed by Zn diffusion and (2) an n-channel transistor formed by e-beam lithography and sulfur ion implants. Electrical measurements on the former established that a p-channel was formed and quantitative values of its properties were obtained. The latter is still under development.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1980
- Accession Number
- ADA093623
Entities
People
- Gerald L. Pearson
Organizations
- Stanford University