Studies of the GaAs/Oxide Interface Using A Liquid Electrode.

Abstract

Anodically grown oxides on GaAs were produced and their electrical properties measured by electrochemical techniques. It was concluded that residual unoxidized arsenic dissolved in the oxide causes poor insulating characteristics, and methods to correct the problem were examined. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1980
Accession Number
ADA093806

Entities

People

  • Karl W. Frese Jr.
  • M. J. Madou
  • S. Roy Morrison

Organizations

  • SRI International

Tags

DTIC Thesaurus Topics

  • California
  • Chemistry
  • Conduction Bands
  • Contracts
  • Electrical Properties
  • Electrodes
  • Electron Mobility
  • Electronics
  • Energy Bands
  • High Density
  • Integrated Circuits
  • Materials
  • Measurement
  • Military Research
  • Oxides
  • Scientists
  • Semiconductors

Readers

  • Regression Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene