Investigation of Charge Coupled Devices for Signal Processing.

Abstract

This report describes a noise correlation processor for automatic low frequency noise power spectra measurements, theoretical analysis of hot electron effects and trapping noise in silicon charge coupled devices, small-signal equivalent circuit measurement of SiO2-Si interface states, the voltage stimulated capacitance transient spectroscopy (VSCTS or DLTS) of silicon bulk deep levels due to impurities and ion implantation damage for buried channel CCD, spurious DLTS surface signal, and CCD performance limitations by interband impact ionization effects due to high electric field in the gap and under the gate of CCD. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1980
Accession Number
ADA094069

Entities

People

  • C. T. Sah
  • J. F. Detry
  • P. C. Chan
  • Yiyang Sun

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Arrhenius Equation
  • Charge Carriers
  • Charge Coupled Devices
  • Data Acquisition
  • Electrical Engineering
  • Electron Density
  • Electron Emission
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Fermi Levels
  • Ion Implantation
  • Measurement
  • Power Spectra
  • Semiconductors
  • Signal Processing

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics