Investigation of CNTD Mechanism and its Effect on Microstructural Properties.

Abstract

This report presents results of a research program in which we sought to develop a chemical vapor deposition (CVD) method for the deposition of extremely fine grained silicon nitride. The program consisted of three separate technical efforts. The first effort, a parametric study of the conventional silicon tetrahalide-ammonia CVD chemistry, produced no significant grain refinement in the Si3N4 deposits. The second effort attempted, with no success, to utilize silicon halide disproportionation chemistry in the CVD process. Finally, we observed an apparently successful Si3N4 grain refinement during the third effort in which we used the competing codeposition of separate phases to interrupt grain growth. During this effort, we tried the codeposition of silicon nitride and silicon carbide with no success. However, we found apparently good results when silicon nitride was codeposited with aluminum nitride. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1980
Accession Number
ADA094242

Entities

People

  • Deepak G. Bhat

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Reactions
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Electrical Properties
  • Geography
  • Materials
  • Materials Engineering
  • Materials Laboratories
  • Materials Science
  • Measurement
  • Mechanical Properties
  • Mechanics
  • Military Research
  • Nitrogen Compounds
  • Silicon Carbide

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.