Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes.

Abstract

Site-specific densities of states for the Ga and As sites in GaAs (110) are derived from the M(1)M(45)V Auger lines and compared for the cleaved and sputtered surfaces. X-ray photoelectron spectroscopy, scanning electron microscopy, and LEED results for these surfaces are also presented. The results are interpreted in terms of a structure for the sputtered surface that consists of a two-phase mixture of Ga and disordered GaAs. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1980
Accession Number
ADA094244

Entities

People

  • D. E. Savage
  • G. D. Davis
  • M. G. Lagally

Organizations

  • University of Wisconsin–Madison

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electrons
  • Computer Programming
  • Computer Programs
  • Diffraction
  • Electron Microscopy
  • Electron Spectroscopy
  • Energy Bands
  • Kinetic Energy
  • Materials
  • Materials Science
  • Microscopy
  • Scanning Electron Microscopy
  • Scattering
  • Spectra
  • Spectroscopy
  • Valence Bands
  • Wisconsin

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene