Monolithic GaAs Superheterodyne Front End.

Abstract

This report describes the progress during the first phase of the development of a monolithic Gallium Arsenide Superheterodyne Front End for the 8GHz military satellite communications band. The integrated GaAs receiver chip is to be fabricated using the monolithic microwave integrated circuit (MMIC) approach. It will contain an RF preamplifier, an FET mixer, and an IF amplifier. A monolithic GaAs local oscillator will be developed under a separate program. This report describes the design and the fabrication of the three circuits to be integrated. Functional monolithic circuits have been fabricated and are being characterized at present. The IF amplifier has shown 8.0 + or - 1.5 db gain and 6.35 db maximum noise figure in the 500 - 1000 MHz frequency band. RF performance of the preamplifier and the mixer will be described in the next report. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1980
Accession Number
ADA094263

Entities

People

  • Aditya K. Gupta
  • D. R. Ch'en
  • Wendell Petersen

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitance
  • Ceramic Materials
  • Electrical Properties
  • Fabrication
  • Field Effect Transistors
  • Film Resistors
  • Frequency
  • Frequency Bands
  • Gallium Arsenides
  • Impedance
  • Integrated Circuits
  • Ion Implantation
  • Microwave Integrated Circuits
  • Military Satellites
  • Monolithic Microwave Integrated Circuits
  • Resonant Circuits

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics
  • Space