InGaAsP Quaternary Materials for Near Infrared Detector and Laser Applications

Abstract

In this project we have been concerned with the liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) growth of this quaternary system. A number of the basic features of the LPE growth of InGaPAs on InP have been identified. InP-In sub 1-x Ga sub x P sub 1-2 As sub z heterostructure lasers and detectors have been constructed and have been studied.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA094277

Entities

People

  • G. E. Stillman
  • N. Holonyak Jr.

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Control Systems
  • Crystal Growth
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Gallium Arsenides
  • Heterojunctions
  • Laser Applications
  • Lasers
  • Power Electronics
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition