Models of Fabrication Processes, Devices, Circuits, and Systems for Computer-Aided Design of VLSI

Abstract

This report covers the technical progress of the program over the six-month period, February 15, 1979 to August 15, 1979. Its organization corresponds to that of the contract proposal with sections devoted to Thermal Oxidation, Ion Implantation, Chemical Vapor Deposition of Silicon, Materials Analysis and Interface Physics, and Complete Process and Device Simulation. Each section contains a description of progress made, including difficulties encountered, results obtained with their supporting data, and brief plans for the future.

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Document Details

Document Type
Technical Report
Publication Date
Aug 15, 1979
Accession Number
ADA094286

Entities

People

  • James D. Plummer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Computer Science
  • Computer-Aided Design
  • Crystal Structure
  • Crystals
  • Electrical Engineering
  • Grain Size
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Pressurization
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy
  • Two Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.