Laser Annealing of Refractory OHMIC Contracts to GaAs.

Abstract

Laser annealing has been successfully applied in producing low resistance ohmic contact to GaAs using refractory metallizations. These alloy systems include TiW, Ta, Mo, and Ni deposited on epitaxial Ge layers grown on (100) n-type GaAs substrates. In some cases an N+ layer obtained by ion implantation was present at the GaAs surface. Ohmic contact resistances of 1-5 X .0000001 omega-sq cm have been produced by laser annealing. These values compare favorably with the results obtained by thermal annealing. The refractory ohmic contacts reported here are intended to improve the reliability of devices operated under high-temperature and/or high-power conditions.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 05, 1981
Accession Number
ADA094306

Entities

People

  • A. Christou
  • H. B. Dietrich
  • J. F. Giuliani
  • W. T. Anderson Jr.

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Compound Semiconductors
  • Diameters
  • Electronics Laboratories
  • Field Effect Transistors
  • High Reliability
  • High Temperature
  • Ion Implantation
  • Laser Beams
  • Lasers
  • Melting Point
  • Metal Contacts
  • Metal-Semiconductor Junctions
  • Metals
  • Reliability
  • Resistance
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition