Multipulse Laser Annealing of Selenium Implanted GaAs.
Abstract
GaAs implanted with 120 keV Se at a fluence of 10 to the 14th power ions/sq cm was laser annealed using .53 micrometers energy from a Q-switched, frequency doubled, Neodymium:YAG laser. The substrates were irradiated in air by either a single pulse or multipulse with an average energy density of 300 mj/sq cm per pulse. The pulse width (FWHM) was 15 ns. Optical reflectivity in the ultraviolet spectrum of 210 nm to 380 nm was used to evaluate the crystal-line structure. The relative crystalline damage versus depth profile was obtained and compared to that of an as-implanted sample. The depth profiling was accomplished using a chemical etch. Implanted samples annealed at 1, 2, 4, 8, and 12 pulses all showed a dramatic reduction of damage as compared to the as-implanted sample. However, the results of the two pulse anneal show the highest degree of recrystallization approaching that of a virgin sample. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA094396
Entities
People
- Ricardo Antonio Contreras
Organizations
- Air Force Institute of Technology