Photoluminescence Study of Thermal Conversion in Gallium Arsenide.

Abstract

A photoluminescence study was made of undoped and chromium-doped gallium arsenide annealed in three different atmospheres: argon, hydrogen, and nitrogen. The purpose of this study was to determine the causes of thermal conversion and to examine the effects of different annealing atmospheres on this problem. It was found that conversion can be due to any of the a number of causes, rather than to one common cause. Conversion in the samples studied was associated with carbon impurities in undoped samples and with silicon in doped samples. Although manganese was found to be present in many samples, no clear association of manganese with type conversion was found. It was found that annealing under nitrogen gas was the most effective way of maintaining a semi-insulating surface layer. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1980
Accession Number
ADA094400

Entities

People

  • John Mclemore Anderson

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Band Gaps
  • Crystal Defects
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Electrical Engineering
  • Electro-Optics
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Lasers
  • Measurement
  • Semiconductor Devices
  • Spectra
  • Spectrum Analyzers

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene