Measurement of the Minority Carrier Diffusion Rate in N-GaAs.
Abstract
A new experimental procedure was developed to directly measure the minority carrier diffusion rate in n-GaAs. A Q-switched Nd-YAG laser was used to excite the sample and the delay between laser excitation and subsequent luminescence of the sample was used to determine the diffusion rate. A mathematical model of carrier diffusion was developed and computer plots generated to predict and analyze the experimental data. With the 4 micron thick sample used, the procedure enabled the researcher to obtain an upper bound in delay time of 350 picoseconds and an approximate diffusion coefficient of 100 sq cm/sec. The spectral components of the luminescence and relative conversion were studied. The luminescent spectra exhibited yet unidentified lines above the band gap energy in addition to the usual set of excitation lines. The conversion efficiency of the laser excitation to photoluminescence was 0.14%. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA094402
Entities
People
- Gary Alan Bleeker
Organizations
- Air Force Institute of Technology