Capless Annealing of Ion Implanted GaA.
Abstract
A capless powder annealing technique (PAT) is described and is shown to enable reproducible annealing of ion implanted GaAs without the need of a protective cap. This method employs finely powdered graphite as the annealing medium with a layer of finely crushed GaAs beneath it proving an As-rich environment which prevents the GaAs substrate from decomposing at typical annealing temperatures of 850 C. Using rf spark-source mass spectrometry, an As concentration in excess of the equilibrium value of As over GaAs at the annealing temperature is found in the post-process powder. The crushed GaAs layer is essential in providing this high As concentration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA094412
Entities
People
- A. A. Immorlica Jr
- D. P. Siu