Indium Phosphide for High Frequency Power Transistors
Abstract
This report covers the conclusion of studies aimed at determining the utility of InP for fabricating power microwave field effect transistors (FET's). This phase of the work provided working transistors which were modeled and compared to their GaAs counterparts. Vapor phase epitaxy (VPE) results are provided for device structures which include high resistivity buffer layers. Ion implantation was aimed at a novel amorphization and low temperature regrowth study to provide implanted p-n junctions in InP for future JFET structures. Processing technology concentrated on a self-aligned diffused gate JFET structure. This technique produced working microwave transistors (JFET) up to 1200 micrometer in gate periphery. The report compares these devices to similar GaAs transistors (MESFET) and makes recommendations for future studies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 28, 1980
- Accession Number
- ADA094601
Entities
People
- R. C. Clarke
- V. L. Wrick
- W. J. Choyke