Incoherent and Laser Photodeposition on Thin Films.
Abstract
High purity Zn, Se, and ZnSe thin films (approximately 100 to 6000A thicknesses) have been deposited on both quartz and sapphire substrates by using a Hg arc lamp u-v light source to photodissociate the organometallic molecules Zn(CH3)2 and Se(CH3)2. Large area depositions (approximately 1.5 cm diameter circles) have been produced, along with masked depositions created by selectively blocking the incoherent light source. Absorption measurements of these organometallic vapors from 0.2 to 20 microns indicates the possibility of producing ultra-high purity thin films by using simultaneously both a CO (5.6 - 5.9 micron) and a CO2 (10.6 micron) laser in conjunction with a pulsed KrF (2480A) in a highly selective two step photodissociation process. Such results offer the potential for a drastically new and greatly improved quality film plus an extremely well controlled alternative to the more conventional thin film deposition techniques such as thermal vacuum deposition, sputtering, and chemical vapor deposition. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1980
- Accession Number
- ADA094718
Entities
People
- Walter E. Johnson
Organizations
- Air Force Institute of Technology