Advanced Techniques for Transmutation Compensation of Extrinsic Silicon Detectors.
Abstract
The effects of nuclear transmutation doping in high quality detector grade silicon have been investigated. A theoretical treatment of the concepts of critical fluence for exact compensation, extrema of silicon electrical parameters as a function of fluence, and defect production rates is presented. Theoretical models of resistivity homogeneity as a function of compensation ratio and maximum possible mean resistivity by NTD as a function of initial resistivity fluctuations are also treated. Experimental techniques such as NAA, isochronal annealing, EPR, optical absorption, Raman scattering, resistivity measurements and DLTS have been used to classify quantitatively the types of defects produced during NTD compensation. Several defect energy levels have been identified by a correlation of EPR and DLTS. The total number of atomic displacements which survive room temperature irradiation have been found to be only about 7% of the total displacements created during irradiation. In addition, highly disordered regions, which in many ways is similar to amorphous silicon, have been observed to anneal in the temperature range of 300-600C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1980
- Accession Number
- ADA094781
Entities
People
- D. L. Cowan
- J. M. Meese
- Meera Chandrasekhar
- P. J. Glairon
- R. Lindley