Hall Effect Near the Mobility Edge: A Scaling Argument.

Abstract

Critical behaviour of the zero temperature Hall constant in a disordered electronic system is considered. It is shown, by means of a scaling argument, that near (above) the mobility edge Ec the Hall constant R diverges according to R(E) approximate (E-Ec) to the -t power, where t is the conductivity exponent. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 26, 1981
Accession Number
ADA095121

Entities

People

  • Boris Shapiro

Organizations

  • Princeton University

Tags

DTIC Thesaurus Topics

  • Conductivity
  • Cyclotrons
  • Electrons
  • Frequency
  • Hall Effect
  • Magnetic Fields
  • Mobility
  • Physical Properties
  • Relaxation Time
  • Scattering
  • Two Dimensional
  • Universities

Fields of Study

  • Physics

Readers

  • Aerospace Propulsion Engineering.
  • Fluid Dynamics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene