A Feasibility Study on the Growth of Bulk GaN Single Crystals
Abstract
This report describes studies of the growth of GaN by the reaction between gallium and ammonia, in the presence of a carrier gas, usually hydrogen. Experiments on the growth of GaN in a horizontal chamber have been modestly successful in that they have shown that crystals over 2.5 mm long can be grown in 10 days. These experiments have identified the temperature and ammonia partial pressure conditions for relatively stable growth and have yielded useful insights into the growth process. Attempts to grow GaN by a vertical gradient transport technique and by the use of gallium/tin alloys have been much less successful. A theoretical model which explains most of the data pertaining to the growth of GaN by this method is included. Finally, recommendations are presented for further study, including suggestions of methods for growing large crystals which should be tried as a continuation to this study. It should be emphasized that this was a short-term feasibility study so that long-term planning based on a detailed understanding of the system was not possible. The approach used was pragmatic and the numerical data was gathered as expeditiously as possible.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1980
- Accession Number
- ADA095567
Entities
People
- D. Elwell
- Robert S. Feigelson
- W. A. Tiller
Organizations
- Stanford University