Semiconductor Properties Near Interfaces.

Abstract

Surface layers on GaAs were studied using cathodoluminescence and secondary ion mass spectrometry. The layers studied included thermally-converted layers formed on semi-insulating GaAs using various heat treatments, and oxides grown by anodizing in aqueous and non-aqueous electrolytes. Some of the investigations required improvements in the Ion MIcroprobe Mass Analyzer; in the course of the investigations an improved ion detector was developed and a microcomputer-based automation system was constructed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1980
Accession Number
ADA095858

Entities

People

  • D. B. Wittry
  • Fanghong Guo
  • S. Y. Yin

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Analyzers
  • Annealing
  • Cathodoluminescence
  • Computers
  • Data Acquisition
  • Detectors
  • Diffusion Coefficient
  • Heat Treatment
  • Mass Spectra
  • Mass Spectrometers
  • Mass Spectrometry
  • Measurement
  • Semiconductors
  • Spectra
  • Spectrometers
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Database Systems and Applications
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene