A Feasibility Study on the Growth of Bulk GaN Single Crystals.

Abstract

In addition to problems of multinucleation, low solubility, and slow convection experienced in earlier experiments, it is postulated that the solubility of GaN in gallium follows a reciprocal temperature dependence. In spite of this handicap, it has been found possible to achieve conditions under which the nucleation of GaN is reduced in comparison to previous experiments and so to produce larger GaN crystals. The major aim of experiments in the near future will be to obtain a more complete understanding of the conditions required to produce large crystals of GaN.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1979
Accession Number
ADA095981

Entities

People

  • W. A. Tiller

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crucibles
  • Crystals
  • Current Density
  • Decomposition
  • Gallium
  • Graphitic Materials
  • Hydrogen
  • Materials
  • Measurement
  • Nitrogen Compounds
  • Nucleation
  • Partial Pressure
  • Peltier Effect
  • Single Crystals
  • Solubility
  • Temperature Gradients

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Technology Areas

  • Microelectronics