Characterization and Analysis of Indium-Doped Silicon Extrinsic Detector Material

Abstract

This final report of a two-year program describes progress made in analyzing Si:In detector material. Hall-effect, photoluminescence and IR measurements were performed to characterize the X level and to determine its nature.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA095982

Entities

People

  • James Baukus
  • T. Mcgill

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Charged Particles
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Detection
  • Detectors
  • Electrons
  • Energy Bands
  • Energy Levels
  • Infrared Detectors
  • Measurement
  • Photoexcitation
  • Semiconductor Devices
  • Semiconductors
  • Waveforms

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.