InP Materials.

Abstract

This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1979 through 30 September 1980. A part of this support was provided by the Rome Air Development Center. More than half of the synthesized polycrystalline ingots have exhibited mobilities at 77 K greater than 5 x 10,000/sq cm/V/sec. From our study of the LEC growth of over 100 InP boules we have found that a high yield of twin-free crystals can be achieved if the axial temperature gradient at the melt interface exceeds a certain minimum value. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1980
Accession Number
ADA096006

Entities

People

  • Gerald W. Iseler

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Convection
  • Crystals
  • Electrical Measurement
  • Electrical Properties
  • Electron Microscopy
  • Heat Energy
  • High Pressure
  • Materials
  • Measurement
  • Optical Materials
  • Optoelectronic Devices
  • Radio Frequency Generators
  • Single Crystals
  • Standards
  • Temperature Gradients
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.