The Relationship of Structure and Properties to Deposition Conditions and the Origin of Residual Stress in CVD Silicon Carbide and Nitride.
Abstract
Two limiting factors in the acceptance of CVD SiC as a structural material have been deposition control and residual stress in the deposit. Deposition parameters have been related to morphological as well as crystallographic structures. The effect of various additions to the basic methyltrichlorosilane and hydrogen deposition gases has also been studied and the effect on structure noted. Deposition rate control through the interaction of these parameters has also been obtained. Residual stresses large enough to crack deposits have been observed. Although no quantitative model has been determined to predict these stresses, a qualitative model has been proposed which allows the trends in residual stress to be predicted. This model is based on structure. Finally, the strength of CVD SiC was determined using a biaxial tensile test to obtain a closer approximation of the as-deposited strength than is possible with three or four-point bend tests. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 13, 1981
- Accession Number
- ADA096031
Entities
People
- J. L. Benjamin
- R. J. Diefendorf
- W. A. Magee
Organizations
- Rensselaer Polytechnic Institute