Graphoepitaxy
Abstract
A new technique for fabricating high-contrast x-ray masks with simple patterns of lines and spaces less than 50 A in width is described. The successful replication of 175-A lines and spaces in polymethyl methacrylate (PMMA) using the carbon K (45-A) x-ray is reported. It was found that PMMA structures smaller than 150 A in width lost their physical integrity and would not adhere to SiO2 substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1979
- Accession Number
- ADA096064
Entities
People
- Henry I. Smith
Organizations
- Massachusetts Institute of Technology