Near Millimeter Wave Local Oscillator Sources.

Abstract

This report describes research on proof of principle that a AlGaAs-GaAs heterostructure can display a negative differential resistance suitable for constructing an oscillator operating in the 100 GHz range. The conjecture is that if the electrons in the GaAs layer are heated by the application of an electric field parallel to the layer interface, they can be made to return to their parent donors in the Si doped AlGaAs layer where their mobilities are much smaller than in the GaAs. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1981
Accession Number
ADA096141

Entities

People

  • Paul D. Coleman

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Electric Fields
  • Electrical Engineering
  • Electron Density
  • Electron Mobility
  • Electron Transfer
  • Electrons
  • Engineering
  • Fabrication
  • Local Oscillators
  • Millimeter Waves
  • Mobility
  • Oscillators
  • Physics Laboratories
  • Semiconductors
  • Test Equipment
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Fluid Dynamics.
  • Microwave Engineering.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics
  • Microelectronics - Graphene