Electronic Properties of III-V Semiconductor Interfaces.
Abstract
Final contract year dealt with dc transport in InP and GaAs device structures at low temperatures and high magnetic fields. Primary emphasis was on the mobility profile in field effect transistors, with secondary emphasis on basic bulk transport mechanisms. In previous years, studies were made of GaAs MIS structures, encapsulation of GaAs for annealing, and electronic profiling of InAs layers. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1980
- Accession Number
- ADA096225
Entities
People
- James R. Sites.
Organizations
- Colorado State University