Electrical Characterization of Complex Memories - BYTE Wide Static RAMS. Part 1.
Abstract
This report describes work performed from June 1979 to September 1980 on electrical characterization of 1KX8 and 2KX8 static RAMs. The objectives of the project were to find 1KX8 and 2KX8 devices that were both attractive to the user and deliverable by industry; electrically characterize these devices; and generate a draft 38510 specification for each using characterization data as a basis for establishing performance limits. These goals were met and it was concluded that at least one company in the merchant semiconductor industry can produce 1KX8/2KX8 static RAMs that will operate over the temperature range of from -55 C case (instant on) to +125 C case (operating) with cycle times of 90/200 NS minimum, and power supply tolerances of + or - 10 percent. One of the problems encountered in establishing future performance limits was the relative newness of high speed (less than 100NS) 1KX8 RAMs and the lack of any American sKX8 static RAMs other than engineering prototypes. As a solution, performance limits for the existing parts were proposed, and limits for several faster speed grades predicted by scaling. Further work might include testing of the enhanced speed versions of the 1KX8 and 2KX8 to justify these proposed limits. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1981
- Accession Number
- ADA096307
Entities
People
- A. H. Taber
- R. A. Moyers
Organizations
- International Business Machines Corporation (Armonk, NY)