Monolithic GaAs Dual-Gate FET Phase Shifter.

Abstract

This report describes the progress made, during the period 1 Sept. 1980 to 31 Dec. 1980, in the development of a monolithic GaAs dual-gate FET phase shifter. The development of a 0 degrees to 360 degrees phase shifter using discrete components is described. The results on the variation of phase shift with bias voltages of the dual-gate FETs are presented over 4- to 8-GHz band. The progress made in the development of monolithic 0 to 90 phase shifter is also presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1981
Accession Number
ADA096468

Entities

People

  • G. T. Taylor
  • Hao Huang
  • M Kumar
  • R. Menna
  • S. N. Subbarao

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Breadboard Models
  • Capacitors
  • Electronics
  • Frequency Bands
  • Impedance
  • Ion Implantation
  • Marine Corps
  • Microwaves
  • Military Research
  • New Jersey
  • New York
  • Phase Shift
  • Schematic Diagrams
  • Semiconductors
  • Substrates
  • Universities

Readers

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  • Integrated Circuit Design and Technology.