Manufacturing Methods and Engineering for TFT Addressed Display.
Abstract
This final report describes the special requirements of the Department of Defense for lightweight, low power alphanumeric displays for field applications, with emphasis on a manufacturing approach to such displays. The prevailing technical philosophy of the related advantages of an active matrix of electroluminescent pixels driven by a matrix of switching elements featuring CdSe-based thin film transistors and its implementation is explained in the context of three phases of technical activity. The first is laboratory-scale verification, followed by two distinct prototype production efforts, the second formulated to eliminate problems and build on experience derived from the first. Both feature the so-called all-stencil mask approach wherein the switching matrix circuit is developed from a series of sequential vacuum depositions through metal aperture masks. All three program phases provide working displays featuring a powder phosphor medium whose operating temperature characteristics were markedly improved during the third program phase. Extensive and successful efforts applied to transistor synthesis during Program Phase II resulted in more than adequate and very reproducible transistor performance. Transistor design could be further optimized, particularly in regards to reducing the on-state impedance of the elemental power transistors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 20, 1980
- Accession Number
- ADA096635
Entities
People
- John P. Murphy
- L. J. Sienkiewicz
- M. W. Cresswell
- P. R. Malmberg
- R. E. Stapleton