Characterization of Ion-Implanted Semiconductors

Abstract

The purpose of this program was to investigate the controlled doping of compound semiconductors by means of ion implantation. This effort has encompassed: (1) the study of the physics of the ion-implantation process; (2) characterization of the as-grown, implanted, and annealed specimens; and (3) optimization of specimen preparation, implantation, and post-implantation treatment for the application of these techniques to electron-device fabrication. In the sections that flow, studies of III-V semiconductors will be described in detail. The analysis and characterization of the specimen by means of photoluminescence, electrical measurements, capacitance-voltage profiling, far-infrared absorption, transmission electron microscopy, and transient- capacitance studies will be discussed. Some of the characterization techniques represent new developments in experimental capabilities. The fabrication of the apparatus as well as the experimental methods used in their application will be treated in detail.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1980
Accession Number
ADA096827

Entities

People

  • Elward T. Rodine
  • Gopal Das
  • James E. Ehret
  • K. K. Bajaj
  • Y. K. Yeo

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Birds
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Computer Programs
  • Computers
  • Crystal Structure
  • Diffraction
  • Electrons
  • Field Effect Transistors
  • Materials
  • Measurement
  • Optics
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics