Submicron FETs Using Molecular Beam Epitaxy.

Abstract

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 1.2 dB with an associated gain of 13 dB has been measured at 8 GHz. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1981
Accession Number
ADA097026

Entities

People

  • C. Nishimoto
  • S. Bandy
  • V. Hoffman
  • Y. G. Chai

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Amplifiers
  • Compression
  • Contracts
  • Electron Beams
  • Electrons
  • Equations
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Fungi
  • Geometry
  • Inductance
  • Material Degradation Processes
  • Materials
  • Military Research
  • Radiation
  • Resistance

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics