Extremely Uniform Electrodeposition of Submicron Schottky Contacts.

Abstract

A plating technique has been developed that yields extremely uniform metal deposits on semiconductor surfaces. This technique utilizes high field pulses that are extremely short in duration. The technique has produced theoretical Schottky barrier diode spreading resistances for contacts with dimensions ranging from 2.5 to 0.12 micron in diameter. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 15, 1981
Accession Number
ADA097657

Entities

People

  • Armond B. Chase
  • Malcolm Mccoll
  • Wilbur A. Garber

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Air Force
  • Barriers
  • Crystals
  • Diameters
  • Diodes
  • Electric Fields
  • Electrical Measurement
  • Electron Microscopes
  • Electronics
  • Electronics Laboratories
  • Frequency
  • Measurement
  • Metal-Semiconductor Junctions
  • Repetition Rate
  • Scanning Electron Microscopes
  • Schottky Diodes
  • Semiconductors

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Integrated Circuit Design and Technology.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene