Basic Problems in InP Technology.
Abstract
The growth and characteristics of high-purity epitaxial InP layers grown by liquid phase epitaxy are described. Silicon and sulfur will be the dominant residual donors in LPE-grown InP. Techniques to reduce the residual donor concentration in the LPE layers are discussed. Chemical polishing the mesa etching of InP and ohmic contact studies to n- and p-type InP are discussed. preliminary investigations show that at power densities of 50,000 W per sq. cm., permanent laser-induced surface damage occurs in InP. Thus laser-annealed ohmic contacts need to be formed at power densities 50,000 W per sq. cm. Severe surface degradation was observed in SiO2 encapsulated, ion-implanted InP samples annealed at 700 C. The use of phosphorus-doped glass (PSG) dramatically reduces such surface degradation. The glass (PSG) dramatically reduces such surface degradation. The electrical properties of Be and Si-implanted layers are reported as functions of both implantation dose and anneal temperature. Preliminary secondary ion mass spectrometry (SIMS) studies show that at high concentrations dramatic redistribution effects occur in Be-implanted and annealed InP, while no significant diffusion occurs in Si-implanted and annealed InP. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1981
- Accession Number
- ADA098113
Entities
People
- C. L. Anderson
- H. L. Dunlap
- K. V. Vaidyanathan
- R. A. Jullens
Organizations
- HRL Laboratories