Time-Resolved Raman Scattering and Transmission Measurements during Pulsed Laser Annealing,

Abstract

Raman scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystalization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 + or - 200 C. Time-resolved transmission measurements at lambda = 1.15 microns also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA098184

Entities

People

  • A. Aydinli
  • A. Compaan
  • H. W. Lo
  • Min‐Cheol Lee

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Dye Lasers
  • Electromagnetic Radiation
  • Electron Beams
  • Energy
  • Energy Bands
  • Laser Beams
  • Lasers
  • Light (Electromagnetic Radiation)
  • Liquid Dye Lasers
  • Materials
  • Measurement
  • Photonic Metamaterials
  • Physics
  • Radiation
  • Raman Scattering
  • Scattering

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition