Pulsed Raman Measurement of the Onset of Recrystallization in Laser Annealing,

Abstract

We have made the first time-resolved measurement of the onset of recrystallization following pulsed laser irradiation of ion-implanted silicon. We find recrystallization to be nearly complete 25 nsec after a 7 nsec annealing pulse with focussed energy density of 0.6 J/sq cm.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1981
Accession Number
ADA098192

Entities

People

  • A. Compaan
  • H. W. Lo

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Argon Lasers
  • Data Acquisition
  • Delay Lines
  • Detection
  • Dye Lasers
  • Electron Beams
  • Implantation
  • Ion Implantation
  • Ions
  • Laser Beams
  • Lasers
  • Materials
  • Measurement
  • Nanosecond Time
  • Pulsed Lasers
  • Raman Scattering

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers