Pulsed Raman Temperature Measurements of Laser-Heated Silicon,

Abstract

Time resolved Raman light scattering determinations of temperature have been made in crystalline silicon where it is found that the lattice temperature is far below melting even for laser power densities of approx. 1 J/sq cm at 485 nm. In ion-implantation-amorphized silicon the pulsed laser Raman technique has identified substantial recrystallization as early as 30 nsec after the peak of the heating pulse. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA098193

Entities

People

  • A. Compaan
  • H. W. Lo

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Data Acquisition
  • Delay Lines
  • Detectors
  • Dye Lasers
  • Electron Holes
  • Frequency Shift
  • Heat Energy
  • Heating
  • High Density
  • High Temperature
  • Lasers
  • Liquid Dye Lasers
  • Materials
  • Measurement
  • Pulsed Lasers
  • Repetition Rate
  • Scattering

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition