Time-Resolved Optical Transmission of Pulsed Laser-Irradiated Silicon,

Abstract

The time-resolved optical transmission of silicon has been observed at lambda = 1.15 microns during irradiation by an 8 nsec pulsed laser at 485 nm with several energy densities in the range of .25 to 1.2 J/sq cm. The transmission exhibits a sudden brief drop consistent with the rise and fall of the reflectivity enhancement. However, the transmission does not exhibit the strong absorption expected of molten silicon with a skin depth of approx. 100A. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 20, 1980
Accession Number
ADA098217

Entities

People

  • A. Aydinli
  • A. Compaan
  • H. W. Lo
  • Min‐Cheol Lee

Organizations

  • Kansas State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Electron Holes
  • Ion Implantation
  • Ions
  • Lasers
  • Losses
  • Materials
  • Military Research
  • Pulsed Lasers
  • Raman Scattering
  • Reflectivity
  • Transmission Loss

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Spectroscopy.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition